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Analysis Of Silicon Carbide Semiconductor Packaging Core Technology -- Silver Sintering Technology
With the development of electronic industry, electronic products are developing in the direction of light weight, thin thickness, small volume, low power consumption, complex functions and high reliability. This requires the power module to have good...
High Temperature Annealing Treatment Of SiC Crystal
The most common and mature method of SiC crystal growth is physical vapor transport method (PVT). This method is a gas phase growth method with high growth temperature and high requirements for raw materials and process parameters. In recent years, a...
Silicon Carbide, The Third Generation Semiconductor Material
Silicon carbide (SIC) is a compound composed of silicon (SI) and carbon (c) by covalent bond. Its basic unit is Si-C tetrahedron, in which Si atoms are located in the center and surrounded by C atoms. All the structures of SiC are composed of Si-C te...
Sapphire Annealing Solution
Sapphire wafer annealing furnace Generally, the epitaxial layers of GaN based materials and devices are mainly grown on sapphire substrates. Sapphire substrate has many advantages: firstly, the production technology of sapphire substrate is mature an...
Office Add: Building B2, 7301 Jiasong North Road, Jiading District, Shanghai,ChinaFactory Add: No.8 Hengshan Road, Development Zone Lu＇an City, Anhui,China
Tel:+86 21 5109 5281
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